1998. 6. 15
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SEMICONDUCTOR
TECHNICAL DATA
KN3904S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=50nA(Max.) ; @V
CE
=30V, V
EB
=3V.
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) ; I
C
=50mA, I
B
=5mA.
Complementary to the KN3906S.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
Type Name
Marking
Lot No.
ZCA
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
200
mA
Base Current
I
B
50
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
1998. 6. 15
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KN3904S
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CEX
V
CE
=30V, V
EB
=3V
-
-
50
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
60
-
-
V
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
C
=1mA, I
B
=0
40
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
6
-
-
V
DC Current Gain *
h
FE
(1)
V
CE
=1V, I
C
=0.1mA
40
-
-
h
FE
(2)
V
CE
=1V, I
C
=1mA
70
-
-
h
FE
(3)
V
CE
=1V, I
C
=10mA
100
-
300
h
FE
(4)
V
CE
=1V, I
C
=50mA
60
-
-
h
FE
(5)
V
CE
=1V, I
C
=100mA
30
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
1
I
C
=10mA, I
B
=1mA
-
-
0.2
V
V
CE(sat)
2
I
C
=50mA, I
B
=5mA
-
-
0.3
Base-Emitter Saturation Voltage *
V
BE(sat)
1
I
C
=10mA, I
B
=1mA
0.65
-
0.85
V
V
BE(sat)
2
I
C
=50mA, I
B
=5mA
-
-
0.95
Transition Frequency
f
T
V
CE
=20V, I
C
=10mA, f=100MHz
-
300
-
MHz
Collector Output Capacitance
C
ob
V
CB
=5V, I
E
=0, f=1MHz
-
-
4.0
pF
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